JPH0381317B

A transverse junction strip structure light-emitting semiconductor device (laser) comprises an active layer (13) for example of a laminated multiquantum well structure. A P-type region (17) of the semiconductor device is formed by doping P-type impurities into portions of the active layer and the cl...

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Bibliographische Detailangaben
1. Verfasser:	YAMAGOSHI SHIGENOBU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A transverse junction strip structure light-emitting semiconductor device (laser) comprises an active layer (13) for example of a laminated multiquantum well structure. A P-type region (17) of the semiconductor device is formed by doping P-type impurities into portions of the active layer and the clad layers (12, 14) between which the active layer is sandwiched. The P-type region includes a mixture region (17A) formed in the course of the diffusion of the p-type impurities. The mixture region has a larger band gap than the remainder of the active layer, and forms a heterojunction with the remainder of the active layer.