LAMINATED TYPE SILICON OXIDE THIN FILM CAPACITOR AND MANUFACTURE THEREOF

PURPOSE:To enhance frequency characteristic by alternately laminating a silicon oxide film and an electrode film on the surface of a semiconductor silicon substrate, and providing a structure in which electrodes are led in parallel at every other layer including the substrate. CONSTITUTION:When a first layer of silicon oxide film 3 on a semiconductor silicon substrate 1 is formed by an oxide film method, the surface of the substrate is heat treated at a high temperature to be oxidized in an atmosphere in which oxygen partial pressure is controlled or in a gas flow containing steam to form an oxide film 3 of a predetermined thickness. Then, a metal electrode film 2 of white metal is formed on the film 3 by a method such as sputtering, etc. Thus, excellent frequency characteristic of the silicon oxide and temperature characteristic are provided, and reduction in thickness of the film, lamination are facilitated, thereby obtaining a capacitor having a small size and a large capacity.