PLASMA VAPOR PHASE GROWTH DEVICE

PURPOSE:To provide the plasma vapor growth device which grows thin films of a uniform thickness on a substrate to be treated by coating the peripheral part of an upper electrode having gas supply openings facing a lower electrode imposed with the substrate with insulating films patterned and formed to concentrical or radial shapes. CONSTITUTION:Plasma CVD having the upper electrode 2 and lower electrode 3 of a parallel flat plate shape shown in the figure is used and silane and NH3 are used as reaction gases 5. The above mentioned gaseous mixture is supplied 8 by gaseous N2 as a carrier gas into a reaction chamber 1. While the vacuum degree in the chamber 1 is maintained under 1Torr by operating a discharge system, a high frequency power source 7 of 13.56MHz is operated. Plasma is generated between the upper electrode 2 and the lower electrode 3 in this way to effect plasma CVD and to form an Si3N4 film of about 1mum thickness on the substrate 6 to be treated. The peripheral part of the electrode 2 and the inner side thereof are coated with the plural concentrical insulating films 10 or radial insulating films 11 so that the film is formed with the good film thickness distribution even if the diameter of the wafer 6 is large.