THIN FILM TRANSISTOR ARRAY

PURPOSE:To sufficiently correct even a thin film transistor array for a high- quality, high-precision display device with a conventional simple laser trimming method by forming a slit-shaped pattern corresponding to a disconnection point at the time of a defective thin film transistor on a metallic film with a high fusion point. CONSTITUTION:The high-fusion-point metallic thin film 102 and the slit pattern formed therein are used to disconnect a defective transistor(TR) from picture elements. Namely, the slit pattern part corresponding to the disconnection part of the defective TR is irradiated with laser beam from the side of a glass substrate 101 and disconnected. Therefore, the size of laser beam working is determined by the size of the slit pattern, so the laser beam need not be reduced to an extremely thin diameter. Thus, by a forming working pattern for laser beam working on the high-fusion-point metallic film to control the working size of the disconnection part and a fine pattern can be worked even with a relatively rough laser beam diameter. Consequently, the fine pattern can be corrected by the simple laser beam working device.