ELECTRON BEAM DIRECT LITHOGRAPHY DEVICE

PURPOSE:To reduce the required patterning period and to conduct patterning in a highly efficient manner by a method wherein a lithography region is divided into the rectangular areas having half the size of a field, a pattern is drawn in the areas by conducting a vector scanning while a table is being moved, and at the same time, the starting time of patterning and the speed of table movement are properly set. CONSTITUTION:First, pertaining to the pattern data of the rectangular area 36 to be patterned in the first place, the data of starting point coordinate of a segment, and the length and direction of segment are read out from a pattern memory 20, and the X-axis deflection scanning data, with which the X-axis direction scanning and the Y-axis direction scanning of the main deflector 15 will be controlled, and Y-axis deflection scanning data are outputted. In association with the starting of patterning, a table 17 moves to the X-axis direction at a fixed speed of V, and as a result, the target beam irradiation point position on a substrate 16 is shifted to X-axis direction. The amount of shifting against the X-coordinate value of the target beam irradiation point of the data, to be outputted from a vector pattern generation circuit 21, is corrected by addition or substraction by the direction using an addition and substraction circuit 29, and the corrected data is inputted to the main deflection and distortion correcting circuit 30. The patterning in the rectangular area is conducted successively while the amount of shifting in X-axis direction of the table 17 is being corrected by the operation same as above-mentioned.