SUBSTRATE HOLDER

PURPOSE:To obtain a substrate holder capable of holding a plurality of materials under processing at the same time and useful to process compound semiconductor substrate by applying high voltage to an electrostatic chuck electrode cooled with a water-cooled electrode and electrostatically adsorbing...

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Bibliographische Detailangaben
Hauptverfasser:	TANABE MASABUMI, HAYASHI TOSHIO, KOMIYA SOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a substrate holder capable of holding a plurality of materials under processing at the same time and useful to process compound semiconductor substrate by applying high voltage to an electrostatic chuck electrode cooled with a water-cooled electrode and electrostatically adsorbing a dielectric tray, on which a material under processing is mounted, to the front of said electrostatic chuck electrode. CONSTITUTION:DC high voltage is applied from a high-voltage DC power source 18 to the conductive patterns 12a and 12b of an electrostatic chuck electrode 3 to generate static electricity in the front of said electrostatic chuck electrode 3 and a tray 5 on which a material under processing 6 is mounted is electrostatically adsorbed thereto. Cooling gas is introduced into a vacuum chamber 2 through a flowing hole 8, a cooling gas introduction hole 14, and a cooling gas blowing hole 17 to cool the material under processing 6 through the tray 5. A current is passed from the power source to a water-cooled electrode 1 to generate plasma between said electrode and an anode and etch the material under processing 6.