DESIGN OF SEMICONDUCTOR DEVICE

PURPOSE:To enable the dielectric breakdown lifetime of a semiconductor device in an electrical field to be evaluated by a method wherein a drain avalanche is made to occur in a micro MOS transistor, and the induced holes are introduced into a gate insulating film. CONSTITUTION:The voltage of a drain...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NISHIOKA TAIJO, OJI YUZURU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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