PRODUCTION OF ALUMINA FILM
PURPOSE:To obtain the subject high-quality alumina film free from contamination of carbon with an excellent workability by using a compound material free from generation of non-volatile carbon compounds and producing a single crystal or amorphous alumina thin film using the vacuum CVD method. CONSTI...
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| creator | IIZUKA HIROHISA ONO SHOICHI TOMII KAORU YOKOO KUNIYOSHI |
| description | PURPOSE:To obtain the subject high-quality alumina film free from contamination of carbon with an excellent workability by using a compound material free from generation of non-volatile carbon compounds and producing a single crystal or amorphous alumina thin film using the vacuum CVD method. CONSTITUTION:A compound material free from generation of non-volatile carbon compounds is prepared. As preferable concrete examples of the compound materials, aluminum alkoxides such as aluminum tri-secondary butoxide represented by the formula are exemplified. A single crystal substrate or an amorphous substrate 7 is then arranged in a vacuum chamber 6 and the inside of the chamber 6 is evacuated to a high vacuum using an evacuation unit 10 followed by electrically charging the substrate 7 for heating. An aluminum alkoxide compound in a bomb 1 is heated and gasified using a heater 3, then introduced into the inside of the chamber 6 and subsequently decomposed on the surface of the substrate 7, thus forming the objective alumina film on the surface of the substrate 7. |
| format | Patent |
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CONSTITUTION:A compound material free from generation of non-volatile carbon compounds is prepared. As preferable concrete examples of the compound materials, aluminum alkoxides such as aluminum tri-secondary butoxide represented by the formula are exemplified. A single crystal substrate or an amorphous substrate 7 is then arranged in a vacuum chamber 6 and the inside of the chamber 6 is evacuated to a high vacuum using an evacuation unit 10 followed by electrically charging the substrate 7 for heating. An aluminum alkoxide compound in a bomb 1 is heated and gasified using a heater 3, then introduced into the inside of the chamber 6 and subsequently decomposed on the surface of the substrate 7, thus forming the objective alumina film on the surface of the substrate 7.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1991</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19911210&DB=EPODOC&CC=JP&NR=H03279297A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19911210&DB=EPODOC&CC=JP&NR=H03279297A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IIZUKA HIROHISA</creatorcontrib><creatorcontrib>ONO SHOICHI</creatorcontrib><creatorcontrib>TOMII KAORU</creatorcontrib><creatorcontrib>YOKOO KUNIYOSHI</creatorcontrib><title>PRODUCTION OF ALUMINA FILM</title><description>PURPOSE:To obtain the subject high-quality alumina film free from contamination of carbon with an excellent workability by using a compound material free from generation of non-volatile carbon compounds and producing a single crystal or amorphous alumina thin film using the vacuum CVD method. CONSTITUTION:A compound material free from generation of non-volatile carbon compounds is prepared. As preferable concrete examples of the compound materials, aluminum alkoxides such as aluminum tri-secondary butoxide represented by the formula are exemplified. A single crystal substrate or an amorphous substrate 7 is then arranged in a vacuum chamber 6 and the inside of the chamber 6 is evacuated to a high vacuum using an evacuation unit 10 followed by electrically charging the substrate 7 for heating. An aluminum alkoxide compound in a bomb 1 is heated and gasified using a heater 3, then introduced into the inside of the chamber 6 and subsequently decomposed on the surface of the substrate 7, thus forming the objective alumina film on the surface of the substrate 7.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1991</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAKCPJ3CXUO8fT3U_B3U3D0CfX19HNUcPP08eVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GxkbmlkaW5o7GxKgBADXlIHw</recordid><startdate>19911210</startdate><enddate>19911210</enddate><creator>IIZUKA HIROHISA</creator><creator>ONO SHOICHI</creator><creator>TOMII KAORU</creator><creator>YOKOO KUNIYOSHI</creator><scope>EVB</scope></search><sort><creationdate>19911210</creationdate><title>PRODUCTION OF ALUMINA FILM</title><author>IIZUKA HIROHISA ; ONO SHOICHI ; TOMII KAORU ; YOKOO KUNIYOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH03279297A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1991</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>IIZUKA HIROHISA</creatorcontrib><creatorcontrib>ONO SHOICHI</creatorcontrib><creatorcontrib>TOMII KAORU</creatorcontrib><creatorcontrib>YOKOO KUNIYOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IIZUKA HIROHISA</au><au>ONO SHOICHI</au><au>TOMII KAORU</au><au>YOKOO KUNIYOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF ALUMINA FILM</title><date>1991-12-10</date><risdate>1991</risdate><abstract>PURPOSE:To obtain the subject high-quality alumina film free from contamination of carbon with an excellent workability by using a compound material free from generation of non-volatile carbon compounds and producing a single crystal or amorphous alumina thin film using the vacuum CVD method. CONSTITUTION:A compound material free from generation of non-volatile carbon compounds is prepared. As preferable concrete examples of the compound materials, aluminum alkoxides such as aluminum tri-secondary butoxide represented by the formula are exemplified. A single crystal substrate or an amorphous substrate 7 is then arranged in a vacuum chamber 6 and the inside of the chamber 6 is evacuated to a high vacuum using an evacuation unit 10 followed by electrically charging the substrate 7 for heating. An aluminum alkoxide compound in a bomb 1 is heated and gasified using a heater 3, then introduced into the inside of the chamber 6 and subsequently decomposed on the surface of the substrate 7, thus forming the objective alumina film on the surface of the substrate 7.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PRODUCTION OF ALUMINA FILM |
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