PRODUCTION OF ALUMINA FILM

PURPOSE:To obtain the subject high-quality alumina film free from contamination of carbon with an excellent workability by using a compound material free from generation of non-volatile carbon compounds and producing a single crystal or amorphous alumina thin film using the vacuum CVD method. CONSTI...

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Bibliographische Detailangaben
Hauptverfasser: IIZUKA HIROHISA, ONO SHOICHI, TOMII KAORU, YOKOO KUNIYOSHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To obtain the subject high-quality alumina film free from contamination of carbon with an excellent workability by using a compound material free from generation of non-volatile carbon compounds and producing a single crystal or amorphous alumina thin film using the vacuum CVD method. CONSTITUTION:A compound material free from generation of non-volatile carbon compounds is prepared. As preferable concrete examples of the compound materials, aluminum alkoxides such as aluminum tri-secondary butoxide represented by the formula are exemplified. A single crystal substrate or an amorphous substrate 7 is then arranged in a vacuum chamber 6 and the inside of the chamber 6 is evacuated to a high vacuum using an evacuation unit 10 followed by electrically charging the substrate 7 for heating. An aluminum alkoxide compound in a bomb 1 is heated and gasified using a heater 3, then introduced into the inside of the chamber 6 and subsequently decomposed on the surface of the substrate 7, thus forming the objective alumina film on the surface of the substrate 7.