SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To make it possible to obtain the high performance and the high reliability of a semiconductor device by a method wherein an Al nitride film is used as an insulating film, such as a dielectric film, a protective film or the like. CONSTITUTION:An Al nitride (AlN) film is used as an insulating film. This Al nitride film is superior in an adhesion to a III-V compound semiconductor, such as a gallium-arsenic compound semiconductor or the like, and has high hardness and superior etching resistance in addition to high insulation properties. Moreover, in the case the Al nitride film is formed by a reactive ion plating method, the film having a superior film quality can be formed at a temperature of a substrate temperature of 500 deg.C or lower compared to other film-forming method. Accordingly, a thermal effect to a wiring and an element, which are provided on a substrate, can be made small. Thereby, a reliability which is required as the insulating film in a device, the withstand voltage of the device and the like are improved.