HEAT-TREATING EQUIPMENT

PURPOSE:To realize treatment excellent in the inside uniformity, transfer a wafer with a robot, and remarkably reduce fraction defective of semiconductor, by performing treatment in the state that a gap is formed between the periphery of a body to be treated and the inside of a straightening plate. CONSTITUTION:A rectilinear part 14 corresponding with the orientation flat part of a semiconductor wafer is formed at a part of a circular aperture 12. Circular support posts 16 are formed at three or more parts on a ring type straightening plate 11, to which support segments 18 are fixed so as to protrude inside the aperture 12. The support segments 18 are desirable to be fixed to the height position between a wafer 20 and the straightening plate 11, and gaps are formed to be 3-10mm suitable for the fork part of a robot hand to lift the wafer 20. When the straightening plate 11 is provided with the rectilinear part 14, and the gap on the whole periphery of the wafer 20 is uniform and 5mm, or when, only in the orientation flat part, the gap between the straightening plate 11 and the wafer 20 is smaller than or equal to 5mm, or the plate 11 and the wafer 20 overlap with each other, the uniformity of film thickness in the surface is superior and less than or equal to 3%.