SEMICONDUCTOR DEVICE

PURPOSE:To obtain a device, a bonding pad of which can be scaled down while the bonding pad can be connected directly to the internal terminal of the lead frame of a film carrier without forming a bump, by making the top face of the bonding pad higher than that of a surface protective film by the projecting section of a semiconductor substrate formed under the top face of the bonding pad. CONSTITUTION:A projecting section 1a is formed to the top face of a semiconductor substrate 1 corresponding to the position of a bonding pad 5, the top face of the bonding pad 5 is made higher than the height of the top face of a surface protective film 7 applied to the peripheral section of the top face of the bonding pad 5, and a leading-out terminal 6 is connected onto the top face of the bonding pad 5. The projecting section 1a is formed in response to the position of the bonding pad 5 to the top face of the semiconductor substrate 1, an insulating film 2, an inter-layer insulating film 4 and the bonding pad 5 are shaped successively in a projecting shape in response to the projecting section 1a, and the top face of the bonding pad 5 is positioned at a section upper than the top face of the surface protective film 7 in the opening section 9 of the surface protective film 7. Accordingly, the length l1 on one side of the opening section 9 of the surface protective film 7 can be formed in a value smaller than the diameter l2 at the connecting section of the bonding pad 5 of the metallic wire 6.