JPH0325034B

PURPOSE:To obtain a resistor which has excellent durability and heat resistant properties, is free from characteristics degradation caused by aging and provides required resistance value by a method wherein crystalline (single-crystalline or polycrystalline) insulating material or semiconductor such as Al2O3, SiO2 or MgO, whose thermal conductivity at the temperature of liquid helium is 1W/cm.K, which is equal to that of metallic material, is employed to improve heat conduction properties by lattice vibration at a low temperature. CONSTITUTION:An Nb film 2 for magnetic shield is formed on a silicon wafer 1, which is not subjected to heat oxidization, and patterned by etching with CF4 gas to form a magnetic shielding film. Then an Si film 3 for layer insulation is formed by heat vaporization by an electron beam gun under the vacuum degree of higher than 10Pa and an MoNX film 4 is formed on it by sputtering and a resist pattern as a resistance film is formed by exposure. After the part of the MoNX film which is not coated with the resist is removed by ion etching with an Ar beam, the resist on the MoNX film is removed by acetone. If the sheet resistance formed like this is measured under the temperature of liquid helium, the deviation of the sheet resistance of the MoNX film with the width wider than 3mum is within 5% and, if the length is changed with the same width, contact resistance between the MoNX film and the Nb wiring film is 0.1OMEGA or less so that this film can be employed as a thin film for resistance of a superconductor integrated circuit.