METHOD FOR ETCHING METAL

PURPOSE:To reduce the amt. of a metal side-etched and to enable etching giving an accurate fine pattern by etching the metal with a positive or negative type photoresist and etching the metal again with a negative type photoresist when the metal is etched to produce a lead frame, etc. CONSTITUTION:M...

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Bibliographische Detailangaben
1. Verfasser:	CHIBA TSUKASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To reduce the amt. of a metal side-etched and to enable etching giving an accurate fine pattern by etching the metal with a positive or negative type photoresist and etching the metal again with a negative type photoresist when the metal is etched to produce a lead frame, etc. CONSTITUTION:Metallic foil A such as copper foil is adhered to a polyimide film C as a support with an adhesive B and the surface of the foil A is cleaned by degreasing and pickling and coated with a positive or negative type photoresist E. A mask having a desired pattern is put on the photoresist, this photoresist is exposed and developed and the foil A is etched with an etching soln. The photoresist is then removed and the surface of the foil A is coated with a negative type photoresist. A mask having a desired pattern is put on the photoresist, this photoresist is exposed and developed and the foil A is etched again. The difference between the width c of the opening in the photoresist and the width a of an opening pierced in the foil A by side etching is reduced and an accurate pattern is formed.