TREATMENT OF MATERIAL TO BE TREATED AND TREATING DEVICE
PURPOSE:To shorten the whole time spent in treatment and to drastically enhance throughput by supplying the same reactive gas to both a standby chamber and a reaction chamber before a shielding means is opened and a material to be treated is sent to the reaction chamber from the standby chamber and...
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| creator | MATAI KOUJI |
| description | PURPOSE:To shorten the whole time spent in treatment and to drastically enhance throughput by supplying the same reactive gas to both a standby chamber and a reaction chamber before a shielding means is opened and a material to be treated is sent to the reaction chamber from the standby chamber and closing the shielding means and thereafter treating the material to be treated by the reactive gas in the reaction chamber. CONSTITUTION:The materials 3b to be treated are set in a standby chamber 2 and thereafter the inside of the chamber 2 is exhausted 8. The same reactive gas is introduced 5, 6 into the reaction chamber 1 and the chamber 2. The flow rate regulation of the reactive gas and the pressure regulation of the chambers 1, 2 are performed. Then a shielding means 4 is opened to transfer one of the materials 3b to be treated to the chamber 1 and thereafter closed. Reaction of the reactive gas is started by a reaction controlling means 1a and treatment such as formation and etching, etc., of deposit is performed for the material 3a to be treated. Then the means 4 is opened to return the treated material 3a to the chamber 2 and also the untreated material 3b is transferred to the chamber 1 and the means 4 is closed. Then the above-mentioned respective stages are repeatedly performed for the whole material to be treated. |
| format | Patent |
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CONSTITUTION:The materials 3b to be treated are set in a standby chamber 2 and thereafter the inside of the chamber 2 is exhausted 8. The same reactive gas is introduced 5, 6 into the reaction chamber 1 and the chamber 2. The flow rate regulation of the reactive gas and the pressure regulation of the chambers 1, 2 are performed. Then a shielding means 4 is opened to transfer one of the materials 3b to be treated to the chamber 1 and thereafter closed. Reaction of the reactive gas is started by a reaction controlling means 1a and treatment such as formation and etching, etc., of deposit is performed for the material 3a to be treated. Then the means 4 is opened to return the treated material 3a to the chamber 2 and also the untreated material 3b is transferred to the chamber 1 and the means 4 is closed. Then the above-mentioned respective stages are repeatedly performed for the whole material to be treated.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1991</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910108&DB=EPODOC&CC=JP&NR=H032372A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910108&DB=EPODOC&CC=JP&NR=H032372A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATAI KOUJI</creatorcontrib><title>TREATMENT OF MATERIAL TO BE TREATED AND TREATING DEVICE</title><description>PURPOSE:To shorten the whole time spent in treatment and to drastically enhance throughput by supplying the same reactive gas to both a standby chamber and a reaction chamber before a shielding means is opened and a material to be treated is sent to the reaction chamber from the standby chamber and closing the shielding means and thereafter treating the material to be treated by the reactive gas in the reaction chamber. CONSTITUTION:The materials 3b to be treated are set in a standby chamber 2 and thereafter the inside of the chamber 2 is exhausted 8. The same reactive gas is introduced 5, 6 into the reaction chamber 1 and the chamber 2. The flow rate regulation of the reactive gas and the pressure regulation of the chambers 1, 2 are performed. Then a shielding means 4 is opened to transfer one of the materials 3b to be treated to the chamber 1 and thereafter closed. Reaction of the reactive gas is started by a reaction controlling means 1a and treatment such as formation and etching, etc., of deposit is performed for the material 3a to be treated. Then the means 4 is opened to return the treated material 3a to the chamber 2 and also the untreated material 3b is transferred to the chamber 1 and the means 4 is closed. Then the above-mentioned respective stages are repeatedly performed for the whole material to be treated.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1991</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPCXJ1DPF19QtR8HdT8HUMcQ3ydPRRCPFXcHJVAMu5uig4-rlA2J5-7gourmGezq48DKxpiTnFqbxQmptB3s01xNlDN7UgPz61uCAxOTUvtSTeK8DDwNjI2NzI0ZiwCgB-fycq</recordid><startdate>19910108</startdate><enddate>19910108</enddate><creator>MATAI KOUJI</creator><scope>EVB</scope></search><sort><creationdate>19910108</creationdate><title>TREATMENT OF MATERIAL TO BE TREATED AND TREATING DEVICE</title><author>MATAI KOUJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH032372A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1991</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MATAI KOUJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATAI KOUJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TREATMENT OF MATERIAL TO BE TREATED AND TREATING DEVICE</title><date>1991-01-08</date><risdate>1991</risdate><abstract>PURPOSE:To shorten the whole time spent in treatment and to drastically enhance throughput by supplying the same reactive gas to both a standby chamber and a reaction chamber before a shielding means is opened and a material to be treated is sent to the reaction chamber from the standby chamber and closing the shielding means and thereafter treating the material to be treated by the reactive gas in the reaction chamber. CONSTITUTION:The materials 3b to be treated are set in a standby chamber 2 and thereafter the inside of the chamber 2 is exhausted 8. The same reactive gas is introduced 5, 6 into the reaction chamber 1 and the chamber 2. The flow rate regulation of the reactive gas and the pressure regulation of the chambers 1, 2 are performed. Then a shielding means 4 is opened to transfer one of the materials 3b to be treated to the chamber 1 and thereafter closed. Reaction of the reactive gas is started by a reaction controlling means 1a and treatment such as formation and etching, etc., of deposit is performed for the material 3a to be treated. Then the means 4 is opened to return the treated material 3a to the chamber 2 and also the untreated material 3b is transferred to the chamber 1 and the means 4 is closed. Then the above-mentioned respective stages are repeatedly performed for the whole material to be treated.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | TREATMENT OF MATERIAL TO BE TREATED AND TREATING DEVICE |
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