VAPOR GROWTH METHOD OF COMPOUND SEMICONDUCTOR CRYSTAL

PURPOSE:To dope carbon in high concentration suitable for HBT and enable the quantity of doping to be controlled by changing the growth temperature, using an organic metal compound as group V material. CONSTITUTION:The crystal growth of GaAs doped with carbon is done by changing the growth temperatu...

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Hauptverfasser:	KAMON KOUICHI, SHIRAKAWA FUTATSU, KIMURA HIROYA, SHIMAZU MITSURU, MURAI SHIGEO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To dope carbon in high concentration suitable for HBT and enable the quantity of doping to be controlled by changing the growth temperature, using an organic metal compound as group V material. CONSTITUTION:The crystal growth of GaAs doped with carbon is done by changing the growth temperature under the pressure within the range of 1-76Torr, using TMGa for group III material and TMAs for group V material. In the dependency on the growth temperature of the quantity of doping with carbon, the quantity of carbon doping can be improved remarkably in the pressure region of 40Torr or less. Moreover, the growth temperature is changed at 625 deg.C or less for growth temperature. Hereby, the quantity of carbon doping in high concentration can be controlled, and an epitaxial film favorable in surface condition can be made.