VAPOR-PHASE SYNTHESIZING DEVICE OF DIAMOND AND TEMPERATURE CONTROL OF BASE PLATE OF THE SAME DEVICE

PURPOSE:To obtain a diamond having the aimed quality at the aimed speed by making possible to control temperature in a wide range and with high accuracy by co-using a heating method and a cooling method for controlling the temperature of a base plate in a device in a vapor-phase synthesis of diamond...

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Bibliographische Detailangaben
Hauptverfasser:	OTSUKA KENICHI, OOTA TOMOHIRO, MITOMO SUSUMU, KONDO HIDEKAZU, SEKIHASHI HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a diamond having the aimed quality at the aimed speed by making possible to control temperature in a wide range and with high accuracy by co-using a heating method and a cooling method for controlling the temperature of a base plate in a device in a vapor-phase synthesis of diamond. CONSTITUTION:The objective device is composed of a base plate 12 on which a diamond is deposited with a vapor-phase synthesis, a reaction vessel 10 including the base plate 12, a cooling means 22 for cooling the base plate 12 with removing excess heat applied to the base plate 12 from an atmosphere or a heat source (e.g. a hot filament 16) for decomposing a raw material gas and a heating means 20 (e.g. a plate heater) for suppressing temperature fluctuation of the base plate 12 and giving minimum heat necessary to temperature control of the base plate 12, independently on the heat source 16 for decomposing the raw material gas.