CLEANING FLUID FOR SEMICONDUCTOR SUBSTRATE AND MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To effectively wash an Si substrate by using liquid which contains SiO2 etching liquid, non-metallic oxidizing agent, and strong acid, the oxidation reaction speed of which agent is larger than the etching speed of the etching liquid. CONSTITUTION:Cleaning fluid containing the following is used; HF of weight ratio higher than or equal to 0.025%, non-metallic oxidiging agent of 0.8-25.0ppm O3, and safe HCl or H2SO4 of pH lower than equal to 2. Standard free energy of formation of the cleaning fluid is low, and metal captured in the vicinity of the surface of the SiO2 film is effectively ionized and cleaned. Thereby metal like Al which has been difficult to be cleaned can be effectively eliminated.