GAS PIPING DEVICE OF CYLINDER BOX

PURPOSE:To execute the switching of gas cylinders in a short period of time and to prevent the degradation in the working rate of a CVD device by disposing two pieces of the cylinders for reactive gases to be supplied to the CVD device, etc., executing the switching of the gases only by the switchin...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	SAKAI KATSUO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To execute the switching of gas cylinders in a short period of time and to prevent the degradation in the working rate of a CVD device by disposing two pieces of the cylinders for reactive gases to be supplied to the CVD device, etc., executing the switching of the gases only by the switching of valves at the time of switching and providing a rotary pump for vacuum in the purge line for residual gases. CONSTITUTION:Two pieces of the cylinders 1, 1a for reactive gases to be used in the CVD device are provided and the gas of the cylinder 1 is supplied to the CVD device. The film formation by CVD is then executed. A reducing valve 2a and a raw gas outlet valve 3a of another cylinder 1a are opened and the outlet valve 3 of the cylinder 1 is closed to continuously supply the reactive gases to the CVD device when the pressure of the cylinder 1 drops to a specified value or below. The CVD film forming treatment is thus continued. The rotary pump 8 provided in the purge line is then operated and a stop valve 9 is opened to supply gaseous N2 and to release the residual gases in the valve 3, purge valve 4 and N2 purge valve 5 of the gas cylinder 1 to a rotary pump side. The purge effect in the piping on cylinder 1 side is thus improved.