REMOVAL OF SURFACE DEFECT ON SEMICONDUCTOR SUBSTRATE

PURPOSE:To enable a protrusion abnormally grown on a surface of an epitaxial crystal thin film to be removed easily by a method wherein a flexible resin thin film is formed closely bonding onto an epitaxial crystal thin film and after applying pressure on the thin film, the resin thin film is released from the epitaxial crystal thin film. CONSTITUTION:A resin thin film is formed on an epitaxial crystal thin film formed on a semiconductor substrate. For example, in order to spin-coat a photoresist, this thin film may be formed by coating the epitaxial crystal thin film with the resin thin film in the thickness almost covering the level of an abnormal protrusion subject to the proper selection of the viscosity of photoresist and the revolution of a spinner. Besides, in case an ultraviolet-curing adhesive tape is to be used, the tape in proper thickness corresponding to the level of the abnormal protrusion may be used. Next, e.g. a metallic roller is rolled reciprocally several times on the formed photosensitive resin thin film to completely remove the abnormal protrusion. Finally, the sensitive resin thin film is released from the epitaxial crystal thin film.