MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To obtain a high reliability MOSFET with narrow gate length by a method wherein, when a bipolar type transistor and an MOS type transistor are formed on the same substrate, an LDD structure is used and a side wall forming process to narrow the emitter width is applied to the MOS side. CONSTI...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	UMEMURA YOSHIO, SHIMODA KOICHI, TSUBONE HITOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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