MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To improve reliability by selectively eliminating an insulating film, an oxidation resistant film, a silicon film, and metal silicide laminated on a substrate, performing heat treatment in an oxidizing atmosphere, and constituting a gentle shape. CONSTITUTION:A laminated film is formed by laminating in order an insulating film 2, an oxidation resistant film 3, a silicon film 4, and metal silicide 5. The silicon film 4 turns to a storage electrode 51 of a capacitor stretching on the oxide film 3. After said laminated film is selectively eliminated and patterned, heat treatment is performed in an oxidizing atmosphere. At this time, an oxide film 102 is eliminated, the silicide 5 is exposed, and an insulating film 103 turning to a capacitor insulating film is formed so as to cover the surface of the silicide 5. A conducting film 104 is formed on the insulating film 103, and turned into a facing electrode of a capacitor. By heat treatment, the end-portion of the laminated film is made gentle, thereby preventing the dielectric breakdown and improving reliability.