SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To obtain a semiconductor device formed with an element having a relatively vigorously uneven surface such as an EPROM, EEPROM, and having no reductions in yield and reliability by forming the uppermost layer of a conductive film for forming a multilayer structure of a conductive film cut out at its upper edge. CONSTITUTION:In a multilayer structure of insulating films 3, 10 and conductive films 11, 9 is formed on a semiconductor substrate 1, the uppermost layer 9 of the films 11, 9 formed in the multilayer structure is formed of a conductive film in which its upper edge is cut out. If the multilayer structure of the films 3, 10 and 11, 9 is formed on the substrate 1, the uppermost layer 6 of the conductive films for forming the structure is formed, a resist pattern 7 for forming electrodes on the film 6 of the uppermost layer is formed, and an undercut is formed on the layer 6 directly under the pattern 7 by using the pattern 7. Thereafter, an element of a stack structure is formed by self-alignment etching using the pattern 7.