SEMICONDUCTOR MANUFACTURING DEVICE

PURPOSE:To restrain the deterioration in the film quality and the distribution of film thickness by a method wherein the heating means of a substrate to be processed are provided in a load lock chamber. CONSTITUTION:A wafer 13 is held by multiple protrusions provided on a part of specimen table 2 while a gap is made between the wafer 13 and the specimen table 2. A reaction chamber 10 and a load lock chamber 11 are respectively provided with a heater 1 while respective heater 1 is provided with a piping 19 of an inert gas such as hot N2 or Ar gas (b) as well as outlets 20 of heat conductive molecular gas so as to feed the heat conductive molecular gas heated by the heaters 1 to the gap made between the specimen table 2 and the wafer 13.