PULLING DEVICE OF SILICON SINGLE CRYSTAL

PURPOSE:To prevent the transition of single crystal resulting from the addition of silicon oxide, etc., and to suppress the occurrence of oxidation induced stacking fault, in a pulling device of silicon single crystal by Czochralski method, by equipping a tubular material of a specific shape around...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAUCHI TAKESHI, SHINOYAMA SEIJI, TAKAO SHIGEYOSHI, MEGURO SEIZO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To prevent the transition of single crystal resulting from the addition of silicon oxide, etc., and to suppress the occurrence of oxidation induced stacking fault, in a pulling device of silicon single crystal by Czochralski method, by equipping a tubular material of a specific shape around single crystal. CONSTITUTION:A device pulling up silicon single crystal 3 from melt 2 in a crucible 2 by Czochralski method is provided with a tubular material 4 surrounding the single crystal and having an axis with an angle to the direction of pulling up the single crystal. The tubular material 4 has the lower end approaching the single crystal 3 and the melt 2 and the upper part of inverted conic shape to prevent crystal defects during pulling.