MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To ensure the super micromachining of a gate electrode and to prevent the deterioration of device characteristics by forming a T-type gate by using both FIB/electron beam methods, and applying a metal film in the groove part of electron beam resist. CONSTITUTION:An N layer 2 and an N layer 3 are formed on the main surface of a GaAs substrate 1. An ohmic electrode 4 is formed on the N layer 3. Then, an insulating film 5 is deposited on the main surface of a substrate 1 by a low-temperature CVD method. Then, converged Ga ions 6 are projected on the insulating film 5. The insulating film 5 is etched to a specified depth, and a groove 7 is formed. A W film 9 is selectively deposited on the surface of the groove. Then, positive-type electron beam resist 10 is applied on the entire substrate. Then, the resist is etched back so that the resist remains only at the groove part. Thereafter, an electron beam 11 is projected on a region where a gate-electrode is to be formed in the resist 10. Development is performed, and a resist pattern is formed. With the resist pattern as a mask, the W film 9 and the insulating film 5 are selectively removed. Then, the entire resist 10 is removed. Thereafter, photoresist 12 is applied on the entire surface. After exposure and development, a recess groove is formed. After a metal film is deposited, a T-type gate electrode 13 is formed, and the device is completed.