QUANTUM INTERFERENCE-EFFECT ELEMENT, MANUFACTURE THEREOF AND LOGIC DEVICE USING QUANTUM INTERFERENCE-EFFECT ELEMENT

PURPOSE:To realize an ultrahigh density and an ultrahigh function of a semiconductor integrated circuit by a method wherein a plurality of dot-shaped channels and a means used to control a phase difference of electron waves passing the channels are provided in order to control an electric current fl...

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Bibliographische Detailangaben
Hauptverfasser: YOKOYAMA NAOKI, OKADA MAKOTO, SASA MASAHIKO, ARIKI HIROSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To realize an ultrahigh density and an ultrahigh function of a semiconductor integrated circuit by a method wherein a plurality of dot-shaped channels and a means used to control a phase difference of electron waves passing the channels are provided in order to control an electric current flowing in the channels by utilizing an interference effect of the electron waves. CONSTITUTION:A slit 4 is installed in a channel 3 between a source and a drain 1, 2; a plurality of dot-shaped channels 5, 6 are installed in the slit 4; a means used to control a phase difference phi of electron waves passing the dot-shaped channels 5, 6 is installed. The dot-shaped channels mean very fine channels; at least one dimension of the channels is larger than an energy of a temperature at which an interval of an energy level uses an element; a remaining one dimension is shorter than an electric scattering length and an inelastic scattering length of electrons. Thereby, an interference effect of the electron waves can be increased; an ultrahigh density and an ultrahigh function of a semiconductor integrated circuit can be realized.