SEMICONDUCTOR SENSOR

PURPOSE:To improve the shape of a through-hole by a simple process while eliminating the masking problem involved in electrolytic etching by etching at one side of a substrate to form a thin part and a through-hole simultaneously. CONSTITUTION:Insulating layers 21 and 29 are formed on the opposite surfaces of a semiconductor substrate 20. Openings 25 and 30 are formed in the insulating layers 21 and 29, and a resistor layer 23 is formed by doping impurity in the semiconductor substrate and it is faced with the openings 25 and 30. A metallized conductor layer 27 is formed at the surface of the semiconductor substrate 20 and connected to the resistor layer 23. The substrate includes a thin part 31 faced with the resistor layer 23. One side of the thin part 31 is exposed to an opening provided in the opposite side of the substrate. Cone-shaped holes 26 and 32 are formed in those portions of the insulating layers 21 and 29 that are distant from the opening 33, and these holes extend into the substrate until they meet. It is possible to improve the shape of a through-hole by a simple process while eliminating the masking problem involved in electrolytic etching.