MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To avoid the corrosion of wirings even if they are structured to be apt to corrode for enhancing the reliability upon a semiconductor device and improving the manufacturing yield by a method wherein a single or multilayered wiring including at least Al alloy formed on a wafer is dry-etched and then held in a reducing gas atmosphere for specific time. CONSTITUTION:In order to dryetch a double-structured wiring comprising a Ti nitride 103 and an Al-Cu alloy 104 as barrier metals, an etching chamber is vacuumized by a vacuum pump while pouring boron trichloride, chlorine into the chamber and then the boron and chlorine are turned into plasma reacting to the material to be etched by high-frequency impressed on an electrode provided in the chamber held at specific vacuum degree. Next, a photoresist 105 used as a mask is removed while a wafer is shifted to an ashing chamber as it is held in the vacuum state so as to be excited for ashing process. Later, aldehyde working as a reducing agent is poured into the ashing chamber holding the wafer so as to remove chlorides 106.