MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent corrosion by depositing a polymer film containing carbon, hydrogen, fluorine on the surface of a wafer, removing the film dipped in an organic solvent, then dipping it in an alkaline solution, neutralizing and removing chlorine and chloride that remain on the surface of a semiconductor substrate. CONSTITUTION:Methane trifluoride is introduced as reaction gas into a vacuum vessel, a high frequency is applied to be discharged to decompose and polymerize it to form a carbon fluoride polymer film 107 containing carbon, hydrogen, fluorine as ingredients on the sidewall of titanium nitride 103, aluminum-copper alloy 104 and the surface of a silicon oxide film 102 and aluminum-copper alloy 104. Then, it is dipped in acetone, the film 107 is dissolved, removed, and then continuously dipped in dilute ammonia water. Here, chloride 106 that remains on the sidewall of the nitride 103, the alloy 104 and the surface of the film 102 and the alloy 104 is completely neutralized and removed. Thus, corrosion can be prevented.