SEMICONDUCTOR DEVICE

PURPOSE:To enable the rapid formation of a depletion layer inside a high resistivity layer and to improve a semiconductor device more in switching speed by a method wherein at a least a hole is provided to the high resistivity layer extending from a surface side to an insulating base, and a control...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IPPOSHI TAKASHI, SUGAHARA KAZUYUKI, IWAMATSU TOSHIAKI, YAMAGUCHI YASUO, INOUE YASUAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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