PRODUCTION OF SUPERCONDUCTIVE COMPOUND OXIDE FILM
PURPOSE:To obtain the subject superconductive film having a high superconduction property without a treatment such as postannealing by blowing O3 gas onto the film-forming surface of a substrate and then carrying out film forming of a compound oxide superconductive material layer using the spatterin...
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| creator | HARADA KEIZO NAKANISHI SHUSUKE ITOZAKI HIDEO HIGAKI KENJIRO YATSU SHUJI |
| description | PURPOSE:To obtain the subject superconductive film having a high superconduction property without a treatment such as postannealing by blowing O3 gas onto the film-forming surface of a substrate and then carrying out film forming of a compound oxide superconductive material layer using the spattering method. CONSTITUTION:A film forming chamber 1 is once evacuated and Ar gas is then introduced thereinto. A high-frequency electric power is applied to a target 5 and a thin film having a composition corresponding to that of the target 5 is formed on the surface of a substrate 2. During the film formation, O3 gas is blown thereonto through a ring-shaped nozzle 7 to obtain the objective superconductive compound oxide thin film. By this method, the above mentioned superconductive thin film having a high superconduction property is obtained without post-annealing after film forming. In addition, SrTiO3 single crystal, MgO single crystal, etc., are exemplified as the material for the substrate 2 and La-, Y-. Bi-based high-temperature superconductive oxide, etc., are exemplified as the superconductive compound oxide material. By the above mentioned method, the objective superconductive compound oxide thin film of high quality can be formed with fewer processes. |
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CONSTITUTION:A film forming chamber 1 is once evacuated and Ar gas is then introduced thereinto. A high-frequency electric power is applied to a target 5 and a thin film having a composition corresponding to that of the target 5 is formed on the surface of a substrate 2. During the film formation, O3 gas is blown thereonto through a ring-shaped nozzle 7 to obtain the objective superconductive compound oxide thin film. By this method, the above mentioned superconductive thin film having a high superconduction property is obtained without post-annealing after film forming. In addition, SrTiO3 single crystal, MgO single crystal, etc., are exemplified as the material for the substrate 2 and La-, Y-. Bi-based high-temperature superconductive oxide, etc., are exemplified as the superconductive compound oxide material. 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CONSTITUTION:A film forming chamber 1 is once evacuated and Ar gas is then introduced thereinto. A high-frequency electric power is applied to a target 5 and a thin film having a composition corresponding to that of the target 5 is formed on the surface of a substrate 2. During the film formation, O3 gas is blown thereonto through a ring-shaped nozzle 7 to obtain the objective superconductive compound oxide thin film. By this method, the above mentioned superconductive thin film having a high superconduction property is obtained without post-annealing after film forming. In addition, SrTiO3 single crystal, MgO single crystal, etc., are exemplified as the material for the substrate 2 and La-, Y-. Bi-based high-temperature superconductive oxide, etc., are exemplified as the superconductive compound oxide material. By the above mentioned method, the objective superconductive compound oxide thin film of high quality can be formed with fewer processes.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>COMPOUNDS THEREOF</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1991</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMCPJ3CXUO8fT3U_B3UwgODXANcvb3AwuFuSo4-_sG-If6uSj4R3i6uCq4efr48jCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeK8ADwNjQxNDQwMTR2Ni1AAAgCsm-w</recordid><startdate>19910617</startdate><enddate>19910617</enddate><creator>HARADA KEIZO</creator><creator>NAKANISHI SHUSUKE</creator><creator>ITOZAKI HIDEO</creator><creator>HIGAKI KENJIRO</creator><creator>YATSU SHUJI</creator><scope>EVB</scope></search><sort><creationdate>19910617</creationdate><title>PRODUCTION OF SUPERCONDUCTIVE COMPOUND OXIDE FILM</title><author>HARADA KEIZO ; NAKANISHI SHUSUKE ; ITOZAKI HIDEO ; HIGAKI KENJIRO ; YATSU SHUJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH03141104A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1991</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>COMPOUNDS THEREOF</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HARADA KEIZO</creatorcontrib><creatorcontrib>NAKANISHI SHUSUKE</creatorcontrib><creatorcontrib>ITOZAKI HIDEO</creatorcontrib><creatorcontrib>HIGAKI KENJIRO</creatorcontrib><creatorcontrib>YATSU SHUJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HARADA KEIZO</au><au>NAKANISHI SHUSUKE</au><au>ITOZAKI HIDEO</au><au>HIGAKI KENJIRO</au><au>YATSU SHUJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF SUPERCONDUCTIVE COMPOUND OXIDE FILM</title><date>1991-06-17</date><risdate>1991</risdate><abstract>PURPOSE:To obtain the subject superconductive film having a high superconduction property without a treatment such as postannealing by blowing O3 gas onto the film-forming surface of a substrate and then carrying out film forming of a compound oxide superconductive material layer using the spattering method. CONSTITUTION:A film forming chamber 1 is once evacuated and Ar gas is then introduced thereinto. A high-frequency electric power is applied to a target 5 and a thin film having a composition corresponding to that of the target 5 is formed on the surface of a substrate 2. During the film formation, O3 gas is blown thereonto through a ring-shaped nozzle 7 to obtain the objective superconductive compound oxide thin film. By this method, the above mentioned superconductive thin film having a high superconduction property is obtained without post-annealing after film forming. In addition, SrTiO3 single crystal, MgO single crystal, etc., are exemplified as the material for the substrate 2 and La-, Y-. Bi-based high-temperature superconductive oxide, etc., are exemplified as the superconductive compound oxide material. By the above mentioned method, the objective superconductive compound oxide thin film of high quality can be formed with fewer processes.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS METALLURGY NON-METALLIC ELEMENTS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PRODUCTION OF SUPERCONDUCTIVE COMPOUND OXIDE FILM |
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