SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To obtain a semiconductor device which can be made large in operational margin to noises and improved in electrostatic breakdown strength as much as possible by a method wherein a specific impedance circuit is connected between nodes which are nearly the same in potential and corresponding to pins to which the same potential is applied. CONSTITUTION:In a semiconductor integrated circuit device provided with pins to which the same potential is applied, an impedance circuit 1 is connected between nodes Nm and Nn which are corresponding to the pins concerned and whose potentials are Vm and Vn of nearly the same potential, where the circuit 1 functions so as to increase in impedance when the potential difference between the nodes Nm and Nn is smaller than a prescribed value of VF to keep the potential difference equal to VP or to decrease in impedance when the potential difference is larger than Vf to make the potential difference decrease to VF. For instance, the impedance circuit 1 is possessed of a current- voltage characteristic shown in a figure, that is, a current is prevented from flowing between the nodes Nm and Nn when a formula, ¦Vm-Vn¦=VF, is satisfied.