SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To stably perform an operation by applying such control that a pre- charge MOSFET comprising a dynamic logic circuit is turned on in a pre-charge period and it can be turned on weakly also in a discharge period. CONSTITUTION:A push-pull circuit consisting of N-channel MOSFETs Q5 and Q6 is provided at an output stage, and the output signals of inverter circuits Q1 and Q2 at a first stage are supplied to the gate of the MOSFET Q5 at a source voltage side, and the output signals of inverter circuits Q3 and Q4 at a second stage are supplied to the gate of the MOSFET Q6 at a ground potential side. Thereby, a voltage -V+h is applied to the source and the gate of the pre-charge MOSFET Q10 or Q12 in the discharge period, which turns on a P-channel MOSFET Q10 or Q12 weakly. In such a way, since a leakage current is compensated, it is possible to stabilize the operation of a dynamic PLA to low speed.