MANUFACTURE OF ARSENIC DIFFUSION AND MANUFACTURE OF SEMICONDUCTOR ELEMENT

PURPOSE:To enhance the workability by reinforcing the structural strength while making the repeated application feasible for doping semiconductor substrate with arsenic by delaying the dissociating rate of silicon arsenide by a method wherein an excessive silicon arsenide fused body is cooled down at specified cooling down rate to be formed into an eutectic body which is sintered later. CONSTITUTION:An excessive silicon arsenide fused body can be manufactured by heating and pressurizing these arsenic and silicon at the level exceeding 36.5 atmospheric pressure and the temperature exceeding 1.083 deg.C but this fused body will become an eutectic body of silicon arsenide and silicon by cooling down this fused body. Since the crystal size of the silicon arsenide of this eutectic body is changed by the cooling down rate when this eutectic body is formed of the fused body, the said size can be made moderate by specifying the cooling down rate to exceed 100 deg.C/hour for delaying the dissociation rate. Furthermore, simultaneously with the manufacture of the eutectic body of the silicon arsenide and silicon, an inorganic matter filler is added to the eutectic body to form a mixture for the enhancement of the thermal resistance so that the objective arsenic diffusion agent may be manufactured.