SILICON ARSENIDE, ARSENIC DIFFUSION AGENT AND MANUFACTURE THEREOF, AND MANUFACTURE OF SEMICONDUCTOR ELEMENT

PURPOSE:To decelerate the dissociating rate for making the repeated application feasible by a method wherein the title arsenic diffusion agent is manufactured by heating silicon arsenide, an eutectic body of silicon arsenide and silicon or a mixture of this eutectic body with an inorganic filler in oxidative gas atmosphere within specific temperature range to be sintered later. CONSTITUTION:Since silicon arsenide is manufactured as an eutectic body of the silicon arsenide and silicon by cooling down an excessive silicon arsenide fused body in a crucible, the eutectic body with silicon as it is or the eutectic body containing an inorganic filler as a thermal resistance accelerator is used. In order to manufacture the arsenic diffusion agent, an ingot of the silicon arsenide or the eutectic body etc., of silicon arsenide and silicon is crushed in a ball mill for 1-36 hours into powder in particle diameter of about 1mum; the powder is heated at 600-1100 deg.C in oxidative atmosphere to form a silica film and then pressed into a formed body in proper thickness and outer diameter to be sintered later.