SILICON WAFER

PURPOSE:To reduce the fluctuation in yield by a method wherein the specific requirements are met for the oxygen concentration between lattices before and after the first heat treatment of silicon wafers as well as before and after the second and third heat treatments. CONSTITUTION:When the oxygen co...

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Bibliographische Detailangaben
Hauptverfasser:	HAGINO MASANOBU, AMAI TSUTOMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To reduce the fluctuation in yield by a method wherein the specific requirements are met for the oxygen concentration between lattices before and after the first heat treatment of silicon wafers as well as before and after the second and third heat treatments. CONSTITUTION:When the oxygen concentrations between lattices before and after the first heat treatment of silicon wafers are specified respectively to be [Oi]1ini, [Oi]11af, likewise those before and after the second and third heat treatment are specified respectively to be [Oi]2ini, [Oi]2af, those oxygen concentrations between lattices can meet the requirements as represented by the following formula i.e. Through these procedures, the fluctuation in yield caused in the manufacturing process of semiconductor products using silicon wafers can be reduced thereby enabling the high yield as a whose to be given.