BISTABLE SEMICONDUCTOR LASER
PURPOSE:To obtain a bistable semiconductor laser having a flat wavelength sensitivity characteristic by a method wherein a stripe-shaped active layer for laser oscillation and a stripeshaped active layer for light amplification are constituted in such a way that they are crossed obliquely in a satur...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To obtain a bistable semiconductor laser having a flat wavelength sensitivity characteristic by a method wherein a stripe-shaped active layer for laser oscillation and a stripeshaped active layer for light amplification are constituted in such a way that they are crossed obliquely in a saturable absorption region. CONSTITUTION:In a bistable semiconductor laser, a stripe-shaped active layer 12 for laser oscillation use and a stripe-shaped active layer 13 for light amplification use are crossed at an angle theta in a saturable absorption region 14. The stripe-shaped active layer 13 for light amplification use which is constituted in this manner and into which a control light is injected does not cause a reflection at an end face even when the layer is left as a cleavage surface without executing a reflectionless coating; it can be operated as a traveling-wave type light amplifier. When the control light is injected into the layer, a flat wavelength sensitivity characteristic without a resonance characteristic is obtained, an operation can be made extremely stable and a sensitivity is increased further because a light amplification function is available. |
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