PRODUCTION OF THIN FILM OF HIGH-VALENCE COPPER OXIDE

PURPOSE:To easily produce a thin film of high-valence copper oxide by irradiating the surface of a thin film of copper or copper-containing substance, in the course of thin film formation or after thin film formation, on a substrate whose temp. is regulated to room temp. or below with oxygen ions at...

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1. Verfasser:	USUKI TOMOAKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To easily produce a thin film of high-valence copper oxide by irradiating the surface of a thin film of copper or copper-containing substance, in the course of thin film formation or after thin film formation, on a substrate whose temp. is regulated to room temp. or below with oxygen ions at a specific accelerating voltage. CONSTITUTION:Sputtering is carried out by irradiating a target 2 with an Ar ion beam 3. The resulting sputtered substance is vapor-deposited onto a substrate 1 disposed in a manner to be opposed to the target 2, by which a thin film of copper or copper-containing substance is formed on the substrate 1. The thin film in the course of the above thin film formation or after the above thin film formation is irradiated with an oxygen ion beam 6 at