SEMICONDUCTOR DEVICE

PURPOSE:To prevent deformation and damage of a metal bonding pad by forming a circular polycrystal silicon wiring directly below the outer periphery part of the metal bonding pad. CONSTITUTION:A metal bonding pad 5 formed through an insulation film 2 and a polycrystal silicon wiring 9 which is placed in circular shape directly below the outer periphery part of the metal bonding pad 5 and is formed being in contact with it are provided on a semiconductor substrate l. For example, a polycrystal silicon wiring 3 to an internal circuit, an interlayer insulation film 4, a metal bonding pad 5, a protection film 7, a contact window 8, and a circular polycrystal silicon wiring 9 formed directly below the outer periphery part of the metal bonding pad 5 are provided on the thick insulation film 2 on the silicon substrate 1. Thus, even if a stress is generated at a protection film on the surface of a semiconductor device. stress is absorbed by a polysilicon wiring directly below the outer periphery part of the metal bonding pad and deformation and damage of the metal bonding pad can be prevented.