SEMICONDUCTOR DEVICE

PURPOSE:To make it possible to connect upper wiring layers readily without the occurrence of imperfect contact on the contact part with a semiconductor substrate at a lower wiring layer by connecting the first upper wiring layer and the second upper wiring layer which is higher than the first layer at an upper region of a flat first contact layer on a first interlayer insulating film. CONSTITUTION:A recess part 16 is formed on the upper surface of a lower Al wiring layer 7. The recess part 16 is filled with a filling insulating film 19 so that the upper surface becomes approximately flat. An upper region of a contact 6 at a first interlayer insulating film 9 is made flat. A first upper Al wiring layer 10 is arranged on the first interlayer insulating film 9 so as to cross the upper region of the contact window 6. Then, the upper surface of the upper region of the contact 6 is also flattened. A second contact window 13 is formed on the upper region of the first contact window 6 at a second interlayer insulating film 12. A second upper Al wiring layer 14 is formed on the second contact window 13. The first upper Al wiring layer 10 is connected to the second upper Al wiring layer 14 through the second contact window 13.