INFRARED DETECTING DEVICE

PURPOSE:To reduce aged deterioration by providing a light receiving portion formed of a semiconductor, an insulating film transparent to infrared rays formed on the semiconductor and an electrically conductive film transparent to infrared rays formed on the insulating film. CONSTITUTION:A device comprises an insulating film 4 transparent to infrared rays formed directly on a light receiving portion formed of a semiconductor 2, and an electrically conductive film 8 transparent to infrared rays formed on the insulating film 4. Thus, the device has no oxide film produced by oxygen diffusion between the semiconductor 2 and the insulating film 4, and comprises the insulating film 4 transparent to infrared rays formed directly on the semiconductor 2 and the electrically conductive film 8 transparent to infrared rays formed on the insulating film 4. In this construction, a positive voltage is applied to the transparent electrically conductive film 8 to make holes, the excess carriers, produced by incident infrared rays hard to diffuse to the surface and prevents surface recombination. Therefore, a high performance device which does not change the characteristics thereof can be achieved.