SEMICONDUCTOR DEVICE

PURPOSE:To decrease a distance between elements for minimizing the area of a semiconductor device while preventing leakage of current and increasing dielectric strength by growing doped polycrystalline silicon on an insulating film provided on an epitaxial layer on a semiconductor substrate. CONSTITUTION:On an insulating film 3 of silicon oxide or the like formed on an epitaxial layer 2 on a semiconductor substrate 1 of P-type silicon or the like, there are formed a dopant diffused layer 4 used for an element such as transistor or the like, an element isolating layer 5 of P-type for example, contact windows 6, a resistance element 7 of doped polycrystalline silicon and electrodes and interconnections 8, 9 for the resistance element. If the resistance element 7 is formed of doped polycrystalline silicon and there is difference of potential across the metallic interconnections 8 and 9, difference of potential is caused also across the resistance element 7 and current is conducted therethrough. On this occasion, the doped polycrystalline silicon serves as a resistance.