JPH0235449B

PURPOSE:To obtain a thin film pattern of organic resin with a single process, by irradiating a substrate surface with far ultraviolet rays in the form of the specified pattern and also irradiating an organic resin material with far ultraviolet rays. CONSTITUTION:A far ultraviolet ray pattern 5 is fo...

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Bibliographische Detailangaben
Hauptverfasser:	TAKASU YASUHIRO, TODOKORO YOSHIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a thin film pattern of organic resin with a single process, by irradiating a substrate surface with far ultraviolet rays in the form of the specified pattern and also irradiating an organic resin material with far ultraviolet rays. CONSTITUTION:A far ultraviolet ray pattern 5 is formed by an Xe-Hg lamp and a quartz photomask, the light of Xe-Hg lamp is condensed with a CaF2 lens. A high output beam 6 obtained is used for irradiation of a PMMA vaporization source. When heated up to 300 deg.C or less, the PMMA is easily vaporized, the PMMA film 4' is selectively deposited to the area not irradiated with the far ultraviolet rays on the Si substrate, forming a pattern which is reversed from the pattern 5. Thereby, PMMA is decomposed and eliminated at the irradiated area and any growth is not carried out. The PMMA resist pattern is formed in the same way as the substrate coated with PMMA previously. The process can be simplified by this method.