MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent a disconnection defect of an Al wiring and a wedge etching defect by ashing in an oxygen atmosphere before photoengraving of Al of the first layer. CONSTITUTION:After vapor deposition of the first layer of Al, the Al surface is oxidized being ashed by an asher so that an etching r...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SHIRAISHI MITSUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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