MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent a disconnection defect of an Al wiring and a wedge etching defect by ashing in an oxygen atmosphere before photoengraving of Al of the first layer. CONSTITUTION:After vapor deposition of the first layer of Al, the Al surface is oxidized being ashed by an asher so that an etching rate is speeded up and the shape of an Al wiring 3 of the first layer is tilted and an interfilm and the shape of Al 7 of the second layer can be made smooth. That is, before photoengraving of Al of the first layer being evaporated, ashing is performed in an O2 atmosphere so that each Al wiring can be made smooth while preventing disconnection of the second layer Al wiring and a wedge etching defect and improving an yield.