LIFT-OFF TREATMENT METHOD AND EQUIPMENT THEREFOR

PURPOSE:To enable lift-off while foreign material is prevented from re-attaching by jetting lift-off solvent on a semiconductor wafer surface, via a nozzle, while high frequency ultrasonic wave of 0.5-2.0MHz is applied, and utilizing its pulverizing effect. CONSTITUTION:While a spin head 2 is rotated, MEK 4, as solvent, is made to pass an ultrasonic wave oscillation nozzle 5 at a pressure of 0.5kg/cm , and the solvent is jetted on the surface of a wafer. In the ultrasonic oscillation nozzle 5, a resonator to obtain ultrasonic wave oscillation of 0.8MHz and 30W is contained. The MEK 6 passes the resonator and is energized by the ultrasonic wave. As the result, high speed vibration is induced at the molecular level, and the resultant acceleration pulverizes photoresist 14 and a metal film 15. By adding pulverizing effect to the MEK having original capability to melt the photoresist 14, the melting and exfoliating of the photoresist 14 are progressed, and the lift-off of the metal film 15 is achieved.