SEMICONDUCTOR LIGHT EMITTING DEVICE

PURPOSE:To improve a light emitting device in yield and to enlarge a vertical mode in width of temperature stability by a method wherein cleavage plane which forms the end face of a vapor growth layer crossing a current constriction layer in a lengthwise direction and a hole section formed of a reflective cleavage end plane opposed to the cleavage plane are provided. CONSTITUTION:Laminated structures 2-7 are continuously grown on the N-type substrate 1 through a vapor growth method, the end faces of the laminated structures are made to serve as a cleavage plane, a stripe-like groove 6 is provided to an N-type GaAs 5 so as to reach to a layer 4 to constitute a current constriction layer 6, and the direction of the layer 6 is made coincident with a direction in which laser rays are radiated. Thereafter, a P-type electrode layer 8 and an N-type electrode layer 9 are patterned on the exposed face of a P-type GaAs crystal 7. Then, the P-type electrode 8 is partly removed, and when the vapor growth layers are obliquely etched in a thicknesswise direction to form a hole section 10 which is cut out of a bridging state, a 001 end face C, which crosses the path of the radiant ray of laser rays at an angle of a few degrees, is formed in the hole section 10. As mentioned above, a semiconductor laser and a reflector are formed of the same material in the same element, and the distance between the semiconductor laser and the reflector is set very accurate, so that a vertical mode can be enlarged in width of temperature stability.