SEMICONDUCTOR DEVICE

PURPOSE:To constitute conductive films in a multilayer structure without deteriorating flatness by forming the end-portions of the conducting films on the wall of the peripheral part formed by the overlap of each layer so as not to be overlapped. CONSTITUTION:On a semiconductor substrate 9, the foll...

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Hauptverfasser: HIROKI TERUO, INABA TORU
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To constitute conductive films in a multilayer structure without deteriorating flatness by forming the end-portions of the conducting films on the wall of the peripheral part formed by the overlap of each layer so as not to be overlapped. CONSTITUTION:On a semiconductor substrate 9, the following are formed in order, and an aperture is arranged; a first conducting film 10, a first insulating film 11, a second conducting film 12, and a second insulating film 13. A third conducting film 14 is so formed that the outer peripheral end-portion of the film 14 is positioned at the part which is inside a first aperture 11a and is outside a second aperture 13a. As a result, the height of the periphery is lowered by the thickness of the third conducting film 14, and the height difference between the central part and the peripheral part of the third conducting film 14 is made small by the amount of one insulating film thickness. Thereby the flatness is improved.