GOLD WIRE FOR BONDING OF SEMICONDUCTOR ELEMENT
PURPOSE:To improve tensile strength of a ball neck section, to increase a loop height, and to reduce wire bending by containing La of 30 to 100wt.ppm, Be of 2 to 10wt.ppm, Ca of 1 to 20wt.ppm, and Mg of 1 to 10wt.ppm, and making the remains of high purity Au. CONSTITUTION:La is contained in 30 to 10...
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| creator | YAMAMOTO TAIYO KUJIRAOKA TAKESHI |
| description | PURPOSE:To improve tensile strength of a ball neck section, to increase a loop height, and to reduce wire bending by containing La of 30 to 100wt.ppm, Be of 2 to 10wt.ppm, Ca of 1 to 20wt.ppm, and Mg of 1 to 10wt.ppm, and making the remains of high purity Au. CONSTITUTION:La is contained in 30 to 100wt.ppm, Be is in 2 to 10wt.ppm, Ca is in 1 to 20wt.ppm, and Mg is in 1 to 10wt.ppm; and the remains consist of high purity Au. Au of at least 99.99% including inevitable impurity is used as a raw material. Accordingly, crystal grain at a ball neck section during bonding is micronized, thereby improving neck strength and mechanical strength of a gold wire. As a result, loop configuration of a long loop and a high loop can be stabilized. |
| format | Patent |
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CONSTITUTION:La is contained in 30 to 100wt.ppm, Be is in 2 to 10wt.ppm, Ca is in 1 to 20wt.ppm, and Mg is in 1 to 10wt.ppm; and the remains consist of high purity Au. Au of at least 99.99% including inevitable impurity is used as a raw material. Accordingly, crystal grain at a ball neck section during bonding is micronized, thereby improving neck strength and mechanical strength of a gold wire. As a result, loop configuration of a long loop and a high loop can be stabilized.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1990</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19901128&DB=EPODOC&CC=JP&NR=H02288346A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19901128&DB=EPODOC&CC=JP&NR=H02288346A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAMOTO TAIYO</creatorcontrib><creatorcontrib>KUJIRAOKA TAKESHI</creatorcontrib><title>GOLD WIRE FOR BONDING OF SEMICONDUCTOR ELEMENT</title><description>PURPOSE:To improve tensile strength of a ball neck section, to increase a loop height, and to reduce wire bending by containing La of 30 to 100wt.ppm, Be of 2 to 10wt.ppm, Ca of 1 to 20wt.ppm, and Mg of 1 to 10wt.ppm, and making the remains of high purity Au. CONSTITUTION:La is contained in 30 to 100wt.ppm, Be is in 2 to 10wt.ppm, Ca is in 1 to 20wt.ppm, and Mg is in 1 to 10wt.ppm; and the remains consist of high purity Au. Au of at least 99.99% including inevitable impurity is used as a raw material. Accordingly, crystal grain at a ball neck section during bonding is micronized, thereby improving neck strength and mechanical strength of a gold wire. As a result, loop configuration of a long loop and a high loop can be stabilized.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1990</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBz9_dxUQj3DHJVcPMPUnDy93Px9HNX8HdTCHb19XQGckOdQ4ASrj6uvq5-ITwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMPAyMjCwtjEzNGYGDUA1rIl3A</recordid><startdate>19901128</startdate><enddate>19901128</enddate><creator>YAMAMOTO TAIYO</creator><creator>KUJIRAOKA TAKESHI</creator><scope>EVB</scope></search><sort><creationdate>19901128</creationdate><title>GOLD WIRE FOR BONDING OF SEMICONDUCTOR ELEMENT</title><author>YAMAMOTO TAIYO ; KUJIRAOKA TAKESHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH02288346A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1990</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAMOTO TAIYO</creatorcontrib><creatorcontrib>KUJIRAOKA TAKESHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAMOTO TAIYO</au><au>KUJIRAOKA TAKESHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GOLD WIRE FOR BONDING OF SEMICONDUCTOR ELEMENT</title><date>1990-11-28</date><risdate>1990</risdate><abstract>PURPOSE:To improve tensile strength of a ball neck section, to increase a loop height, and to reduce wire bending by containing La of 30 to 100wt.ppm, Be of 2 to 10wt.ppm, Ca of 1 to 20wt.ppm, and Mg of 1 to 10wt.ppm, and making the remains of high purity Au. CONSTITUTION:La is contained in 30 to 100wt.ppm, Be is in 2 to 10wt.ppm, Ca is in 1 to 20wt.ppm, and Mg is in 1 to 10wt.ppm; and the remains consist of high purity Au. Au of at least 99.99% including inevitable impurity is used as a raw material. Accordingly, crystal grain at a ball neck section during bonding is micronized, thereby improving neck strength and mechanical strength of a gold wire. As a result, loop configuration of a long loop and a high loop can be stabilized.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | GOLD WIRE FOR BONDING OF SEMICONDUCTOR ELEMENT |
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